10 a low v f schottky barrier rectifier www. microsemi . com scottsdale division ups1040e3 ups1040e3 description this ups1040e3 in the powermite3 ? package is a high efficiency schottky rectifier that is also rohs compliant offering high current/power capabilities previously found only in much larger packages. th ey are ideal for smd applications that operate at high frequencies. in add ition to its size advantages, the powermite3 ? package includes a full metallic bottom that eliminates the possibility of solder flux entrapment during assembly and a unique lock ing tab act as an efficient heat path to the heat-sink mounting. its innovative design makes this device ideal for use with automatic insertion equipment. important: for the most current data, consult microsemi ?s website: http://www.microsemi.com absolute maximum ratings at 25o c (unless otherwise specified) rating symbol value unit peak repetitive reverse voltage working peak reverse voltage dc blocking voltage v rrm v rwm v r 40 v rms reverse voltage v r (rms) 28 v average rectified output current i o 10 a non-repetitive peak forward surge current 8.3 ms single half sine wave superimposed on rated load@ t c =90oc i fsm 150 a storage temperature t stg -55 to +150 oc junction temperature t j -55 to +150 oc thermal characteristics thermal resistance junction-to-case (bottom) r jc 3.2 oc/ watt junction to ambient (1) r ja 65 oc/ watt (1) when mounted on fr-4 pc board using 2 oz copper with recommended minimum foot print powermite 3? key features ? very low thermal resistance package ? rohs compliant wi th e3 suffix part number ? guard-ring-die construction for transient protection ? efficient heat path with integral locking bottom metal tab ? low forward voltage ? full metallic bottom eliminates flux entrapment ? compatible with automatic insertion ? low profile-maximum height of 1mm ? options for screening in accordance with mil-prf-19500 for jan, jantx, and jantxv are available by adding mq, mx, or mv prefixes respectively to part numbers. for example, designate mxups1040e3 for a jantx (consult factory for tin-lead plating). ? optional 100% avionics screening available by adding ma prefix for 100% temperature cycle, thermal impedance and 24 hours htrb (consult factory for tin-lead plating) applications/benefits ? switching and regulating power supplies. ? silicon schottky (hot carrier) rectifier for minimal reverse voltage recovery ? elimination of reverse-recovery oscillations to reduce need for emi filtering ? charge pump circuits ? reduces reverse reco very loss with low i rm ? small foot print 190 x 270 mils (1:1 actual size) see mounting pad details on pg 3 mechanical & packaging ? case: void-free transfer molded thermosetting epoxy compound meeting ul94v-0 ? finish: annealed matte-tin plating over copper and readily solderable per mil-std-750 method 2026 (consult factory for tin-lead plating) ? polarity: see figure (left) ? marking: s1040? ? weight: 0.072 gram (approx.) ? package dimension on last page ? tape & reel option: 16 mm tape per standard eia-481-b, 5000 on 13? reel u p s 3 4 0 e 3 microsemi scottsdale division page 1 copyright ? 2007 6-26-2007 rev e 8700 e. thomas rd. po box 1390, scottsdale, az 85252 usa, (480) 941-6300, fax: (480) 947-1503
10 a low v f schottky barrier rectifier www. microsemi . com scottsdale division ups1040e3 ups1040e3 electrical parameters @ 25 c (unless otherwise specified) parameter symbol conditions min typ. max units forward voltage (note 1) v f i f = 8 a , t j = 25 oc i f = 8 a , t j = 125 oc i f = 10 a , t j = 25 oc 0.45 0.47 0.49 0.41 0.51 v reverse break down voltage (note 1) v br i r = 1 ma 40 v reverse current (note1) i r v r = 35 v, t j = 25oc v r = 35 v, t j = 100 oc 0.1 12.5 0.3 25 ma ma capacitance c t v r = 4.0v; f = 1 mh z 700 pf note: 1 short duration test pulse used to minimize self ? heating effect. graphs microsemi scottsdale division page 2 copyright ? 2007 6-26-2007 rev e 8700 e. thomas rd. po box 1390, scottsdale, az 85252 usa, (480) 941-6300, fax: (480) 947-1503
10 a low v f schottky barrier rectifier www. microsemi . com scottsdale division ups1040e3 ups1040e3 graphs p f(av) , average forward power dissipation i f(av) , average forward current (a) fig. 5 forward power dissipation note 1: t a = t c at case bottom where r jc =2.5o c/w and r ca = 0o c/w (infinite heat sink). note 2: device mounted on getek substrate, 2" x 2", 2 oz. copper , double-sided , cathode pad dimensions 0.75" x 1.0", anode pad dimensions 0.25" x 1.0". r ja in range of 15-30 c/w. note 3: device mounted on fra-4 substrate, 2" x 2", 2 oz. copper, single-sided, pad layout r ja in range of 65c/w. see mounting pad dimensions on next page. microsemi scottsdale division page 3 copyright ? 2007 6-26-2007 rev e 8700 e. thomas rd. po box 1390, scottsdale, az 85252 usa, (480) 941-6300, fax: (480) 947-1503
10 a low v f schottky barrier rectifier www. microsemi . com scottsdale division ups1040e3 ups1040e3 package & mounting pad dimensions packaging: inches millimeters dim nominal nominal a 0.070 1.778 b 0.173 4.392 c 0.200 5.080 d 0.035 0.889 e 0.160 4.064 f 0.072 1.829 g 0.056 1.422 h 0.044 1.118 j 0.190 4.826 k 0.210 5.344 l 0.038 0.965 m 0.034 0.864 n 0.030 0.762 p 0.030 0.762 microsemi scottsdale division page 4 copyright ? 2007 6-26-2007 rev e 8700 e. thomas rd. po box 1390, scottsdale, az 85252 usa, (480) 941-6300, fax: (480) 947-1503
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